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MBRF60030R

MBRF60030R

MBRF60030R

GeneSiC Semiconductor

MBRF60030R datasheet pdf and Diodes - Rectifiers - Arrays product details from GeneSiC Semiconductor stock available on our website

SOT-23

MBRF60030R Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 7 Weeks
Mount Chassis Mount
Mounting Type Chassis Mount
Package / Case TO-244AB
Diode Element Material SILICON
PackagingBulk
Published 2013
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
HTS Code8541.10.00.80
Terminal Position UPPER
Terminal FormUNSPECIFIED
JESD-30 Code R-PUFM-X2
Operating Temperature (Max) 150°C
Number of Elements 2
Element ConfigurationCommon Anode
Speed Fast Recovery =< 500ns, > 200mA (Io)
Diode Type Schottky
Current - Reverse Leakage @ Vr 10mA @ 20V
Voltage - Forward (Vf) (Max) @ If 650mV @ 300A
Forward Current600A
Operating Temperature - Junction -40°C~175°C
Application POWER
Current - Average Rectified (Io) 300A DC
Max Reverse Voltage (DC) 30V
Average Rectified Current300A
Number of Phases 1
Peak Reverse Current1A
Max Repetitive Reverse Voltage (Vrrm) 30V
Diode Configuration 1 Pair Common Anode
RoHS StatusRoHS Compliant
In-Stock:3919 items

MBRF60030R Product Details

MBRF60030R Overview


Devices that have a forward voltage of 600A will operate.A reverse voltage peak of 1A is used to power devices like this one.

MBRF60030R Features


a peak voltage of 1A
a reverse voltage peak of 1A

MBRF60030R Applications


There are a lot of GeneSiC Semiconductor MBRF60030R applications of rectifier diode array.

  • Rectifiers for UBS
  • General Rectification
  • Rectifiers in switch mode power supplies (SMPS)
  • Battery chargers
  • Rectifier for drives applications
  • Crowbar applications
  • Free wheeling diode in low voltage converters

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