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1N3889

1N3889

1N3889

GeneSiC Semiconductor

DIODE GEN PURP 50V 12A DO4

SOT-23

1N3889 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 10 Weeks
Lifecycle Status PRODUCTION (Last Updated: 6 months ago)
Mount Chassis, Stud
Mounting Type Chassis, Stud Mount
Package / Case DO-203AA, DO-4, Stud
Number of Pins 2
Supplier Device Package DO-4
PackagingBulk
Published 2010
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Base Part Number 1N3889
Speed Fast Recovery =< 500ns, > 200mA (Io)
Diode Type Standard
Current - Reverse Leakage @ Vr 25μA @ 50V
Voltage - Forward (Vf) (Max) @ If 1.4V @ 12A
Forward Current12A
Operating Temperature - Junction -65°C~150°C
Max Surge Current90A
Voltage - DC Reverse (Vr) (Max) 50V
Current - Average Rectified (Io) 12A
Max Reverse Voltage (DC) 50V
Average Rectified Current12A
Reverse Recovery Time 200 ns
Peak Reverse Current25μA
Max Repetitive Reverse Voltage (Vrrm) 50V
Reverse Voltage50V
Recovery Time 200 ns
RoHS StatusRoHS Compliant
In-Stock:927 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$9.31000$9.31
10$8.38100$83.81

About 1N3889

The 1N3889 from GeneSiC Semiconductor is a high-performance microcontroller designed for a wide range of embedded applications. This component features DIODE GEN PURP 50V 12A DO4.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the 1N3889, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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