EPC2012

Manufacturer part number:EPC2012

Manufacturer:EPC

Description:TRANS GAN 200V 3A BUMPED DIE

Case Package:SOT-23

Datasheet:EPC2012 Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	Die
Supplier Device Package	Die
Operating Temperature	-40°C~125°C TJ
Packaging	Cut Tape (CT)
Published	2012
Series	eGaN®
Part Status	Discontinued
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Technology	GaNFET (Gallium Nitride)
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	100mOhm @ 3A, 5V
Vgs(th) (Max) @ Id	2.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	145pF @ 100V
Current - Continuous Drain (Id) @ 25°C	3A Ta
Gate Charge (Qg) (Max) @ Vgs	1.8nC @ 5V
Drain to Source Voltage (Vdss)	200V
Drive Voltage (Max Rds On,Min Rds On)	5V
Vgs (Max)	+6V, -5V
Continuous Drain Current (ID)	3A
Input Capacitance	145pF
Rds On Max	100 mΩ
RoHS Status	ROHS3 Compliant

About EPC2012

The EPC2012 from EPC is a high-performance microcontroller designed for a wide range of embedded applications. This component features TRANS GAN 200V 3A BUMPED DIE.

Key Features

Advanced AVR architecture for efficient processing
Wide operating temperature range: -40°C to 85°C
Low power consumption for energy-efficient applications
Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

Industrial control systems
Consumer electronics
Automotive systems
IoT devices
Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the EPC2012, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.