EPC2010

Manufacturer part number:EPC2010

Manufacturer:EPC

Description:TRANS GAN 200V 12A BUMPED DIE

Case Package:SOT-23

Datasheet:EPC2010 Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	Die
Supplier Device Package	Die
Operating Temperature	-40°C~125°C TJ
Packaging	Cut Tape (CT)
Published	2013
Series	eGaN®
Part Status	Discontinued
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Technology	GaNFET (Gallium Nitride)
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	25mOhm @ 6A, 5V
Vgs(th) (Max) @ Id	2.5V @ 3mA
Input Capacitance (Ciss) (Max) @ Vds	540pF @ 100V
Current - Continuous Drain (Id) @ 25°C	12A Ta
Gate Charge (Qg) (Max) @ Vgs	7.5nC @ 5V
Drain to Source Voltage (Vdss)	200V
Drive Voltage (Max Rds On,Min Rds On)	5V
Vgs (Max)	+6V, -4V
Continuous Drain Current (ID)	12A
Input Capacitance	540pF
Rds On Max	25 mΩ
RoHS Status	ROHS3 Compliant

About EPC2010

The EPC2010 from EPC is a high-performance microcontroller designed for a wide range of embedded applications. This component features TRANS GAN 200V 12A BUMPED DIE.

Key Features

Advanced AVR architecture for efficient processing
Wide operating temperature range: -40°C to 85°C
Low power consumption for energy-efficient applications
Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

Industrial control systems
Consumer electronics
Automotive systems
IoT devices
Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the EPC2010, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.