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RBV801

RBV801

RBV801

EIC Semiconductor

SOT-23

RBV801 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
ECCN (US) EAR99
HTS 8541.10.00.80
Bridge Type Single Phase
Peak Reverse Repetitive Voltage (V) 100
Peak Average Forward Current (A) 8
Peak RMS Reverse Voltage (V) 70
Peak Non-Repetitive Forward Surge Current (A) 300
Peak Forward Voltage (V) 1@4A
Peak Reverse Current (uA) 10
Minimum Operating Temperature (°C) -40
Maximum Operating Temperature (°C) 150
Standard Package Name RBV25
Supplier Package RBV25
Military No
Mounting Through Hole
Package Height 20(Max)
Package Length 30(Max)
Package Width 4.9(Max)
PCB changed 4
Part StatusActive
Pin Count4
Configuration Single
RoHS StatusRoHS Compliant
In-Stock:3313 items

RBV801 Product Details

RBV801 Overview


The peak forward voltage is 1@4A according to the datasheets.This device can operate efficiently with a reverse voltage range of 70.

RBV801 Features


the forward peak voltage is 1@4A
the peak RMS reverse voltage range of 70


RBV801 Applications


There are a lot of EIC Semiconductor
RBV801 applications of RF diodes.


  • Telematic systems
  • Compensators
  • Radar systems for industrial use
  • Ultra high-speed switching
  • Clamping circuits
  • Diode ring mixer
  • RF detector
  • RF voltage doubler
  • Wearables
  • Smart metering

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