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RBV2501D

RBV2501D

RBV2501D

EIC Semiconductor

SOT-23

RBV2501D Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
ECCN (US) EAR99
HTS 8541.10.00.80
Bridge Type Single Phase
Peak Reverse Repetitive Voltage (V) 100
Peak Average Forward Current (A) 25
Peak RMS Reverse Voltage (V) 70
Peak Non-Repetitive Forward Surge Current (A) 400
Peak Forward Voltage (V) 1.1
Peak Reverse Current (uA) 10
Minimum Operating Temperature (°C) -40
Maximum Operating Temperature (°C) 150
Standard Package Name RBV25
Supplier Package RBV25
Military No
Mounting Through Hole
Package Height 20(Max)
Package Length 30(Max)
Package Width 4.9(Max)
PCB changed 4
Part StatusActive
Pin Count4
Configuration Single
RoHS StatusRoHS Compliant
In-Stock:1829 items

RBV2501D Product Details

RBV2501D Overview


Datasheets indicate 1.1 as the peak forward voltage.RF diode operates efficiently wRF diodeh a peak reverse voltage range of 70.

RBV2501D Features


the forward peak voltage is 1.1
the peak RMS reverse voltage range of 70


RBV2501D Applications


There are a lot of EIC Semiconductor
RBV2501D applications of RF diodes.


  • Ultra high-speed switching
  • Clamping circuits
  • Diode ring mixer
  • RF detector
  • RF voltage doubler
  • Wearables
  • Smart metering
  • Set top boxes
  • RF attenuators and switches
  • Low-loss, high-power limiters

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