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BYT52M

BYT52M

BYT52M

EIC Semiconductor

SOT-23

BYT52M Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
ECCN (US) EAR99
HTS 8541.10.00.80
Maximum DC Reverse Voltage (V) 1000
Peak Reverse Repetitive Voltage (V) 1000
Maximum Continuous Forward Current (A) 1.4
Peak Non-Repetitive Surge Current (A) 50
Peak Forward Voltage (V) 1.3@1A
Peak Reverse Current (uA) 10
Peak Reverse Recovery Time (ns) 200
Minimum Operating Temperature (°C) -65
Maximum Operating Temperature (°C) 175
Supplier Package Case D-2
Military No
Mounting Through Hole
Package Length 7.2(Max)
PCB changed 2
Part StatusActive
Type Switching Diode
Pin Count2
Configuration Single
Diameter 4.1(Max)
RoHS StatusRoHS Compliant
In-Stock:3370 items

BYT52M Product Details

BYT52M Overview


The peak forward voltage is 1.3@1A according to the datasheets.This device consumes about 1.4 continuous forward current at any given time.To operate, a DC reverse voltage less than 1000 must be used.

BYT52M Features


the forward peak voltage is 1.3@1A


BYT52M Applications


There are a lot of EIC Semiconductor
BYT52M applications of RF diodes.


  • Telematic systems
  • Compensators
  • Radar systems for industrial use
  • Ultra high-speed switching
  • Clamping circuits
  • Diode ring mixer
  • RF detector
  • RF voltage doubler
  • Wearables
  • Smart metering

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