DN0150BLP4-7 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 200 @ 2mA 6V.When VCE saturation is 250mV @ 10mA, 100mA, transistor means Ic has reached transistors maximum value (saturated).With the emitter base voltage set at 5V, an efficient operation can be achieved.Parts of this part have transition frequencies of 60MHz.There is a breakdown input voltage of 50V volts that it can take.The maximum collector current is 100mA volts.
DN0150BLP4-7 Features
the DC current gain for this device is 200 @ 2mA 6V
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 60MHz
DN0150BLP4-7 Applications
There are a lot of Diodes Incorporated DN0150BLP4-7 applications of single BJT transistors.
- Muting
- Interface
- Inverter
- Driver
