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DMT69M8LSS-13

DMT69M8LSS-13

DMT69M8LSS-13

Diodes Incorporated

MOSFET BVDSS: 41V 60V,SO-8,T&R,2

SOT-23

DMT69M8LSS-13 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 8 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2015
JESD-609 Code e3
Pbfree Code yes
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Power Dissipation-Max 1.25W Ta
FET Type N-Channel
Rds On (Max) @ Id, Vgs 12m Ω @ 13.5A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1925pF @ 30V
Current - Continuous Drain (Id) @ 25°C 9.8A Ta
Gate Charge (Qg) (Max) @ Vgs 33.5nC @ 10V
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±16V
Continuous Drain Current (ID) 9.8A
RoHS StatusROHS3 Compliant
In-Stock:2934 items

About DMT69M8LSS-13

The DMT69M8LSS-13 from Diodes Incorporated is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET BVDSS: 41V 60V,SO-8,T&R,2.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the DMT69M8LSS-13, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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