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DMT3011LDT-7

DMT3011LDT-7

DMT3011LDT-7

Diodes Incorporated

MOSFET 2N-CH 30V 8A V-DFN3030-8

SOT-23

DMT3011LDT-7 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 23 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-VDFN Exposed Pad
Supplier Device Package V-DFN3030-8 (Type K)
Operating Temperature-55°C~155°C TJ
PackagingTape & Reel (TR)
Published 2015
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature155°C
Min Operating Temperature -55°C
Max Power Dissipation1.9W
Power - Max 1.9W
FET Type 2 N-Channel (Dual) Asymmetrical
Rds On (Max) @ Id, Vgs 20mOhm @ 6A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 641pF @ 15V
Current - Continuous Drain (Id) @ 25°C 8A 10.7A
Gate Charge (Qg) (Max) @ Vgs 13.2nC @ 10V
Drain to Source Voltage (Vdss) 30V
Continuous Drain Current (ID) 10.7A
Input Capacitance641pF
FET Feature Standard
Rds On Max 20 mΩ
RoHS StatusROHS3 Compliant
In-Stock:8568 items

Pricing & Ordering

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About DMT3011LDT-7

The DMT3011LDT-7 from Diodes Incorporated is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET 2N-CH 30V 8A V-DFN3030-8.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the DMT3011LDT-7, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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