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2N7002E-7-F

2N7002E-7-F

2N7002E-7-F

Diodes Incorporated

2N7002E-7-F datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Diodes Incorporated stock available on our website

SOT-23

2N7002E-7-F Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 19 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Weight 7.994566mg
Transistor Element Material SILICON
Manufacturer Package Identifier 2N7002E-7-F
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2013
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 4Ohm
Terminal Finish Matte Tin (Sn)
Additional FeatureLOW THRESHOLD
Subcategory FET General Purpose Powers
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 40
Pin Count3
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 370mW Ta
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation540mW
Turn On Delay Time7 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3 Ω @ 250mA, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 50pF @ 25V
Current - Continuous Drain (Id) @ 25°C 250mA Ta
Gate Charge (Qg) (Max) @ Vgs 0.22nC @ 4.5V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Turn-Off Delay Time 11 ns
Continuous Drain Current (ID) 250mA
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 0.24A
Drain to Source Breakdown Voltage 60V
Feedback Cap-Max (Crss) 5 pF
Height 1mm
Length 2.9mm
Width 1.3mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:25673 items

Pricing & Ordering

QuantityUnit PriceExt. Price

2N7002E-7-F Product Details

2N7002E-7-F Overview


With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 50pF @ 25V.The drain current is?the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 250mA. This device has 60V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 60V.A device's drain current is its maximum continuous current, and this device's drain current is 0.24A.It is [11 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 7 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Its overall power consumption can be reduced by using drive voltage (4.5V 10V).

2N7002E-7-F Features


a continuous drain current (ID) of 250mA
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 11 ns

2N7002E-7-F Applications


There are a lot of Diodes Incorporated 2N7002E-7-F applications of single MOSFETs transistors.

  • LCD/LED TV
  • Micro Solar Inverter
  • General Purpose Interfacing Switch
  • DC-to-DC converters
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Industrial Power Supplies
  • Lighting
  • DC/DC converters
  • PFC stages, hard switching PWM stages and resonant switching

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