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S70GL02GT11FHB020

S70GL02GT11FHB020

S70GL02GT11FHB020

Cypress Semiconductor Corp

GL-T Memory IC GL-T Series 13mm mm

SOT-23

S70GL02GT11FHB020 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 13 Weeks
Mounting Type Surface Mount
Package / Case 64-LBGA
Surface MountYES
Operating Temperature-40°C~105°C TA
PackagingTray
Series GL-T
Part StatusActive
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 64
Technology FLASH - NOR
Voltage - Supply 2.7V~3.6V
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) NOT SPECIFIED
Number of Functions 1
Supply Voltage 3V
Terminal Pitch1mm
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PBGA-B64
Supply Voltage-Max (Vsup) 3.6V
Supply Voltage-Min (Vsup) 2.7V
Memory Size2Gb 256M x 8 128M x 16
Memory TypeNon-Volatile
Operating ModeASYNCHRONOUS
Access Time 110ns
Memory Format FLASH
Memory InterfaceParallel
Organization 128MX16
Memory Width 16
Memory Density 2147483648 bit
Screening Level AEC-Q100
Programming Voltage3V
Alternate Memory Width 8
Height Seated (Max) 1.4mm
Length 13mm
Width 11mm
RoHS StatusROHS3 Compliant
In-Stock:334 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$30.98000$30.98
500$30.6702$15335.1
1000$30.3604$30360.4
1500$30.0506$45075.9
2000$29.7408$59481.6
2500$29.431$73577.5

S70GL02GT11FHB020 Product Details

S70GL02GT11FHB020 Overview


Non-Volatile is its memory type. It is available in a case with a Tray shape. Embedded in the 64-LBGA case, memory ics is a single file. There is 2Gb 256M x 8 128M x 16 of memory on the chip. This device uses a FLASH-format memory, which is of mainstream design. Due to its wide temperature range of -40°C~105°C TA, this device is well suited to a wide range of applications that require high performance. It is supplied votage within 2.7V~3.6V. Its recommended mounting type is Surface Mount. The chip contains 64 terminations. For a comprehensive working procedure, this part supports as many as 1 functions. In order to power this memory device, 3V will be necessary. This part is part of the GL-T series of memory devices, which play a key role in its target applications. To alter the state of certain nonvolatile memory arrays, 3V programming voltage is required.

S70GL02GT11FHB020 Features


Package / Case: 64-LBGA

S70GL02GT11FHB020 Applications


There are a lot of Cypress Semiconductor Corp S70GL02GT11FHB020 Memory applications.

  • Cache memory
  • data buffer
  • servers
  • eDRAM
  • personal digital assistants
  • eSRAM
  • nonvolatile BIOS memory
  • cell phones
  • multimedia computers
  • graphics card

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