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S70FL01GSAGBHVC10

S70FL01GSAGBHVC10

S70FL01GSAGBHVC10

Cypress Semiconductor Corp

FL-S Memory IC FL-S Series 8mm mm

SOT-23

S70FL01GSAGBHVC10 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 13 Weeks
Mounting Type Surface Mount
Package / Case 24-TBGA
Surface MountYES
Operating Temperature-40°C~105°C TA
PackagingTray
Series FL-S
Part StatusActive
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 24
Technology FLASH - NOR
Voltage - Supply 2.7V~3.6V
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) NOT SPECIFIED
Number of Functions 1
Supply Voltage 3V
Terminal Pitch1mm
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PBGA-B24
Supply Voltage-Max (Vsup) 3.6V
Supply Voltage-Min (Vsup) 2.7V
Memory Size1Gb 128M x 8
Memory TypeNon-Volatile
Operating ModeSYNCHRONOUS
Clock Frequency 133MHz
Memory Format FLASH
Memory InterfaceSPI - Quad I/O
Organization 128MX8
Memory Width 8
Memory Density 1073741824 bit
Parallel/Serial SERIAL
Programming Voltage3V
Height Seated (Max) 1.2mm
Length 8mm
Width 6mm
RoHS StatusROHS3 Compliant
In-Stock:676 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$13.08000$13.08
500$12.9492$6474.6
1000$12.8184$12818.4
1500$12.6876$19031.4
2000$12.5568$25113.6
2500$12.426$31065

S70FL01GSAGBHVC10 Product Details

S70FL01GSAGBHVC10 Overview


In this case, the memory type of the device can be classified as Non-Volatile. It is available in a case with a Tray shape. As you can see, it is embedded in 24-TBGA case. There is an 1Gb 128M x 8 memory capacity on the chip. This device uses takes advantage of the FLASH format. -40°C~105°C TA is an extended operating temperature range, making this device ideal for demanding applications. A supply voltage of 2.7V~3.6V can be applied to it. It is recommended to mount it in the Surface Mount mounting type. A total of 24 terminations have been planted on the chip. In total, 1 functions are supported by this part. Memory devices such as this one are designed to be powered by 3V and should be used as such. In the memory, there is a clock frequency rotation that ranges 133MHz. Among the FL-S series of memory devices, this part is essential for its applications. A programming voltage of 3V is required to change a nonvolatile memory array's state.

S70FL01GSAGBHVC10 Features


Package / Case: 24-TBGA

S70FL01GSAGBHVC10 Applications


There are a lot of Cypress Semiconductor Corp S70FL01GSAGBHVC10 Memory applications.

  • embedded logic
  • networks
  • eSRAM
  • nonvolatile BIOS memory
  • multimedia computers
  • servers
  • cell phones
  • hard disk drive (HDD)
  • graphics card
  • data buffer

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