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S34MS01G200TFB003

S34MS01G200TFB003

S34MS01G200TFB003

Cypress Semiconductor Corp

Automotive, AEC-Q100, MS-2 Memory IC Automotive, AEC-Q100, MS-2 Series 18.4mm mm

SOT-23

S34MS01G200TFB003 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Surface Mount
Package / Case 48-TFSOP (0.724, 18.40mm Width)
Surface MountYES
Operating Temperature-40°C~105°C TA
PackagingTape & Reel (TR)
Series Automotive, AEC-Q100, MS-2
JESD-609 Code e3
Part StatusDiscontinued
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 48
Terminal Finish Matte Tin (Sn)
HTS Code8542.32.00.51
Technology FLASH - NAND
Voltage - Supply 1.7V~1.95V
Terminal Position DUAL
Peak Reflow Temperature (Cel) NOT SPECIFIED
Number of Functions 1
Supply Voltage 1.8V
Terminal Pitch0.5mm
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-G48
Supply Voltage-Max (Vsup) 1.95V
Supply Voltage-Min (Vsup) 1.7V
Memory Size1Gb 128M x 8
Memory TypeNon-Volatile
Operating ModeASYNCHRONOUS
Memory Format FLASH
Memory InterfaceParallel
Organization 128MX8
Memory Width 8
Write Cycle Time - Word, Page 45ns
Memory Density 1073741824 bit
Programming Voltage1.8V
Height Seated (Max) 1.2mm
Length 18.4mm
Width 12mm
RoHS StatusROHS3 Compliant
In-Stock:1858 items

Pricing & Ordering

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S34MS01G200TFB003 Product Details

S34MS01G200TFB003 Overview


A Non-Volatile-type memory can be classified as the memory type of this device. Case Tape & Reel (TR) is available. The file is embedded in a 48-TFSOP (0.724, 18.40mm Width) case. 1Gb 128M x 8 is the chip's memory size. FLASH-format memory is used in this device, which is a mainstream design. This device has an extended operating temperature range of -40°C~105°C TA, so it's perfect for a wide range of demanding applications. A supply voltage of 1.7V~1.95V can be applied to it. The recommended mounting type for this device is Surface Mount. On the chip, there are 48 terminations. This part supports as many as 1 functions for the comprehensive working procedure. The memory device designed for this application has been designed to be powered by an 1.8V power supply. This part plays an important role in applications that target the Automotive, AEC-Q100, MS-2 series of memory devices. To alter the state of certain nonvolatile memory arrays, 1.8V programming voltage is required.

S34MS01G200TFB003 Features


Package / Case: 48-TFSOP (0.724, 18.40mm Width)

S34MS01G200TFB003 Applications


There are a lot of Cypress Semiconductor Corp S34MS01G200TFB003 Memory applications.

  • data buffer
  • Cache memory
  • nonvolatile BIOS memory
  • hard disk drive (HDD)
  • DVD disk buffer
  • eSRAM
  • servers
  • supercomputers
  • personal digital assistants
  • mainframes

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