S34ML08G101BHB003 Overview
Non-Volatile is the type of memory it has. There is a Tape & Reel (TR) case available. The case is embedded in 63-VFBGA. The chip has an 8Gb 1G x 8 memory. This device utilizes a FLASH format memory which is of mainstream design. Due to its wide temperature range of -40°C~105°C TA, this device is well suited to a wide range of applications that require high performance. A voltage of 2.7V~3.6V is possible to be applied to the supply. The recommended mounting type for this device is Surface Mount. It is planted on the chip with 63 terminations. The comprehensive working procedure is supported by 1 functions in this part. Memory devices such as this one are designed to be powered by 3V and should be used as such. Among the Automotive, AEC-Q100, ML-1 series of memory devices, this part is essential for its applications. A programming voltage of 3V is required to alter the state of certain nonvolatile memory arrays.
S34ML08G101BHB003 Features
Package / Case: 63-VFBGA
S34ML08G101BHB003 Applications
There are a lot of Cypress Semiconductor Corp S34ML08G101BHB003 Memory applications.
- eSRAM
- supercomputers
- data buffer
- personal digital assistants
- cell phones
- telecommunications
- hard disk drive (HDD)
- Cache memory
- networks
- DVD disk buffer
