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S34ML04G200TFA000

S34ML04G200TFA000

S34ML04G200TFA000

Cypress Semiconductor Corp

ML-2 Memory IC ML-2 Series 18.4mm mm

SOT-23

S34ML04G200TFA000 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 20 Weeks
Mounting Type Surface Mount
Package / Case 48-TFSOP (0.724, 18.40mm Width)
Surface MountYES
Operating Temperature-40°C~85°C TA
PackagingTray
Published 2006
Series ML-2
JESD-609 Code e3
Part StatusDiscontinued
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 48
Terminal Finish Matte Tin (Sn)
HTS Code8542.32.00.51
Technology FLASH - NAND
Voltage - Supply 2.7V~3.6V
Terminal Position DUAL
Peak Reflow Temperature (Cel) NOT SPECIFIED
Number of Functions 1
Supply Voltage 3.3V
Terminal Pitch0.5mm
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-G48
Supply Voltage-Max (Vsup) 3.6V
Supply Voltage-Min (Vsup) 2.7V
Memory Size4Gb 512M x 8
Memory TypeNon-Volatile
Operating ModeASYNCHRONOUS
Memory Format FLASH
Memory InterfaceParallel
Organization 512MX8
Memory Width 8
Write Cycle Time - Word, Page 25ns
Memory Density 4294967296 bit
Screening Level AEC-Q100
Programming Voltage3V
Height Seated (Max) 1.2mm
Length 18.4mm
Width 12mm
RoHS StatusROHS3 Compliant
In-Stock:4321 items

Pricing & Ordering

QuantityUnit PriceExt. Price
96$8.20302$787.48992

S34ML04G200TFA000 Product Details

S34ML04G200TFA000 Overview


There is a memory type Non-Volatile for this type of device. The case comes in the Tray style. There is a 48-TFSOP (0.724, 18.40mm Width) case embedded in it. It is estimated that the memory size on the chip is 4Gb 512M x 8. This device uses a FLASH-format memory, which is of mainstream design. This device has an extended operating temperature range of -40°C~85°C TA, so it's perfect for a wide range of demanding applications. It is supplied votage within 2.7V~3.6V. There is a recommended mounting type of Surface Mount for it. The chip contains 48 terminations. For a comprehensive working procedure, this part supports as many as 1 functions. Memory devices such as this one are designed to be powered by 3.3V and should be used as such. In its target applications, this memory ics plays an important role as a member of the ML-2 series of memory devices. 3V programming voltage is required to change the state of certain nonvolatile memory arrays.

S34ML04G200TFA000 Features


Package / Case: 48-TFSOP (0.724, 18.40mm Width)

S34ML04G200TFA000 Applications


There are a lot of Cypress Semiconductor Corp S34ML04G200TFA000 Memory applications.

  • eDRAM
  • nonvolatile BIOS memory
  • DVD disk buffer
  • networking
  • workstations,
  • printers
  • supercomputers
  • multimedia computers
  • graphics card
  • hard disk drive (HDD)

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