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S29GL512T12DHN010

S29GL512T12DHN010

S29GL512T12DHN010

Cypress Semiconductor Corp

GL-T Memory IC GL-T Series 9mm mm

SOT-23

S29GL512T12DHN010 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 13 Weeks
Mounting Type Surface Mount
Package / Case 64-LBGA
Surface MountYES
Operating Temperature-40°C~125°C TA
PackagingTray
Published 2016
Series GL-T
Part StatusActive
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 64
HTS Code8542.32.00.51
Technology FLASH - NOR
Voltage - Supply 2.7V~3.6V
Terminal Position BOTTOM
Number of Functions 1
Supply Voltage 3V
Terminal Pitch1mm
JESD-30 Code S-PBGA-B64
Supply Voltage-Max (Vsup) 3.6V
Supply Voltage-Min (Vsup) 2.7V
Memory Size512Mb 64M x 8
Memory TypeNon-Volatile
Operating ModeASYNCHRONOUS
Access Time 120ns
Memory Format FLASH
Memory InterfaceParallel
Organization 32MX16
Memory Width 16
Write Cycle Time - Word, Page 60ns
Memory Density 536870912 bit
Programming Voltage2.7V
Alternate Memory Width 8
Height Seated (Max) 1.4mm
Length 9mm
Width 9mm
RoHS StatusROHS3 Compliant
In-Stock:641 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$9.75000$9.75
10$9.03300$90.33
25$8.82840$220.71
50$8.78000$439
100$7.72960$772.96
260$7.34719$1910.2694
520$7.27177$3781.3204

S29GL512T12DHN010 Product Details

S29GL512T12DHN010 Overview


There is a memory type Non-Volatile for this type of device. There is a Tray case available. The file is embedded in a 64-LBGA case. The chip has an 512Mb 64M x 8 memory. There is a FLASH-format memory used in this device, which is the memory format used by mainstream devices. Suitable for use in a wide range of demanding applications, this device offers an extended operating temperature range of -40°C~125°C TA. With 2.7V~3.6V as the supply voltage, it is capable of handling memory ics. Its recommended mounting type is Surface Mount. It is planted on the chip with 64 terminations. There are 1 functions supported by this part as part of the comprehensive working process. This ic memory chip is designed to be supplied with 3V. This part is part of the GL-T series of memory devices, which play a key role in its target applications. A programming voltage of 2.7V is required to change a nonvolatile memory array's state.

S29GL512T12DHN010 Features


Package / Case: 64-LBGA

S29GL512T12DHN010 Applications


There are a lot of Cypress Semiconductor Corp S29GL512T12DHN010 Memory applications.

  • personal computers
  • DVD disk buffer
  • workstations,
  • nonvolatile BIOS memory
  • hard disk drive (HDD)
  • embedded logic
  • data buffer
  • personal digital assistants
  • eSRAM
  • networking

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