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S29GL512T11DHB010

S29GL512T11DHB010

S29GL512T11DHB010

Cypress Semiconductor Corp

Memory IC 9mm mm

SOT-23

S29GL512T11DHB010 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 13 Weeks
Surface MountYES
PackagingTray
Part StatusActive
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 64
Additional FeatureCAN ALSO BE ORGANISED AS 512MX1
HTS Code8542.32.00.51
Technology CMOS
Terminal Position BOTTOM
Terminal FormBALL
Peak Reflow Temperature (Cel) NOT SPECIFIED
Number of Functions 1
Supply Voltage 3V
Terminal Pitch1mm
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code S-PBGA-B64
Operating Temperature (Max) 105°C
Operating Temperature (Min) -40°C
Supply Voltage-Max (Vsup) 3.6V
Temperature GradeINDUSTRIAL
Supply Voltage-Min (Vsup) 2.7V
Operating ModeASYNCHRONOUS
Organization 32MX16
Memory Width 16
Memory Density 536870912 bit
Screening Level AEC-Q100
Access Time (Max) 110 ns
Parallel/Serial PARALLEL
Memory IC Type FLASH
Programming Voltage2.7V
Alternate Memory Width 8
Height Seated (Max) 1.4mm
Length 9mm
Width 9mm
RoHS StatusROHS3 Compliant
In-Stock:758 items

Pricing & Ordering

QuantityUnit PriceExt. Price
260$8.04896$2092.7296

S29GL512T11DHB010 Product Details

S29GL512T11DHB010 Overview


It is supplied votage within Tray. 64 terminations are planted on the chip. As many as 1 functions are supported for comprehensive working. Memory devices such as this one are designed to be powered by 3V and should be used as such. Despite all its merits, this chip also features CAN ALSO BE ORGANISED AS 512MX1 to boost system performance. There is a need for a programming voltage of 2.7V in order to modify the state of some nonvolatile memory arrays. It has a FLASH memory IC type. Only use it above 105°C. A temperature of -40°C is required for the unit to operate, otherwise, it will not operate.

S29GL512T11DHB010 Features


Additional Feature:CAN ALSO BE ORGANISED AS 512MX1

S29GL512T11DHB010 Applications


There are a lot of Cypress Semiconductor Corp S29GL512T11DHB010 Memory applications.

  • eSRAM
  • Camcorders
  • telecommunications
  • graphics card
  • DVD disk buffer
  • personal digital assistants
  • Cache memory
  • servers
  • printers
  • personal computers

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