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S29GL256S90TFA010

S29GL256S90TFA010

S29GL256S90TFA010

Cypress Semiconductor Corp

GL-S Memory IC GL-S Series 18.4mm mm

SOT-23

S29GL256S90TFA010 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 13 Weeks
Mounting Type Surface Mount
Package / Case 56-TFSOP (0.724, 18.40mm Width)
Surface MountYES
Operating Temperature-40°C~85°C TA
PackagingTray
Published 2017
Series GL-S
Part StatusActive
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 56
HTS Code8542.32.00.51
Technology FLASH - NOR
Voltage - Supply 2.7V~3.6V
Terminal Position DUAL
Peak Reflow Temperature (Cel) NOT SPECIFIED
Number of Functions 1
Supply Voltage 3V
Terminal Pitch0.5mm
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-G56
Supply Voltage-Max (Vsup) 3.6V
Supply Voltage-Min (Vsup) 2.7V
Memory Size256Mb 16M x 16
Memory TypeNon-Volatile
Operating ModeASYNCHRONOUS
Access Time 90ns
Memory Format FLASH
Memory InterfaceParallel
Organization 32MX8
Memory Width 8
Write Cycle Time - Word, Page 60ns
Memory Density 268435456 bit
Screening Level AEC-Q100
Programming Voltage3V
Height Seated (Max) 1.2mm
Length 18.4mm
Width 14mm
RoHS StatusROHS3 Compliant
In-Stock:986 items

Pricing & Ordering

QuantityUnit PriceExt. Price
91$6.44527$586.51957

S29GL256S90TFA010 Product Details

S29GL256S90TFA010 Overview


A Non-Volatile-type memory can be classified as the memory type of this device. It is supplied votage within Tray. Embedded in the 56-TFSOP (0.724, 18.40mm Width) case, memory ics is a single file. There is 256Mb 16M x 16 of memory on the chip. There is a FLASH-format memory used in this device, which is the memory format used by mainstream devices. -40°C~85°C TA is an extended operating temperature range, making this device ideal for demanding applications. A supply voltage of 2.7V~3.6V can be applied to it. A Surface Mount mounting type is recommended for this product. The chip has 56 terminations. It supports up to 1 functions for comprehensive operation. The memory device is designed to be supplied with an 3V volt power supply in order to operate properly. It is an important component of the GL-S series memory devices used in a variety of applications. To alter the state of certain nonvolatile memory arrays, 3V programming voltage is required.

S29GL256S90TFA010 Features


Package / Case: 56-TFSOP (0.724, 18.40mm Width)

S29GL256S90TFA010 Applications


There are a lot of Cypress Semiconductor Corp S29GL256S90TFA010 Memory applications.

  • telecommunications
  • embedded logic
  • hard disk drive (HDD)
  • Cache memory
  • eSRAM
  • personal digital assistants
  • nonvolatile BIOS memory
  • supercomputers
  • mainframes
  • graphics card

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