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S29GL256N11TFVR10

S29GL256N11TFVR10

S29GL256N11TFVR10

Cypress Semiconductor Corp

GL-N Memory IC GL-N Series

SOT-23

S29GL256N11TFVR10 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 18 Weeks
Mounting Type Surface Mount
Package / Case 56-TFSOP (0.724, 18.40mm Width)
Supplier Device Package 56-TSOP
Operating Temperature-40°C~105°C TA
PackagingTray
Series GL-N
Part StatusActive
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Technology FLASH - NOR
Voltage - Supply 3V~3.6V
Memory Size256Mb 32M x 8 16M x 16
Memory TypeNon-Volatile
Access Time 110ns
Memory Format FLASH
Memory InterfaceParallel
Write Cycle Time - Word, Page 110ns
RoHS StatusROHS3 Compliant
In-Stock:2588 items

Pricing & Ordering

QuantityUnit PriceExt. Price
91$8.02549$730.31959

S29GL256N11TFVR10 Product Details

S29GL256N11TFVR10 Overview


In this case, the memory type of the device can be classified as Non-Volatile. It is supplied votage within Tray. 56-TFSOP (0.724, 18.40mm Width) case encloses it. 256Mb 32M x 8 16M x 16 is the chip's memory size. This device uses a FLASH-format memory, which is of mainstream design. The device's extended operating temperature range of -40°C~105°C TA makes it ideal for many demanding applications. There is a voltage range of 3V~3.6V for the supply voltage. There is a recommended mounting type of Surface Mount for it. This part plays an important role in applications that target the GL-N series of memory devices.

S29GL256N11TFVR10 Features


Package / Case: 56-TFSOP (0.724, 18.40mm Width)

S29GL256N11TFVR10 Applications


There are a lot of Cypress Semiconductor Corp S29GL256N11TFVR10 Memory applications.

  • supercomputers
  • Camcorders
  • main computer memory
  • workstations,
  • eDRAM
  • servers
  • telecommunications
  • personal digital assistants
  • cell phones
  • mainframes

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