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S29GL256N10FAI020

S29GL256N10FAI020

S29GL256N10FAI020

Cypress Semiconductor Corp

Memory IC 13mm mm

SOT-23

S29GL256N10FAI020 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Surface MountYES
PackagingBulk
Published 2003
JESD-609 Code e0
Part StatusObsolete
Moisture Sensitivity Level (MSL) Vendor Undefined
Number of Terminations 64
Terminal Finish Tin/Lead (Sn/Pb)
Technology CMOS
Terminal Position BOTTOM
Terminal FormBALL
Number of Functions 1
Supply Voltage 3V
Terminal Pitch1mm
Reach Compliance Code compliant
JESD-30 Code R-PBGA-B64
Operating Temperature (Max) 85°C
Operating Temperature (Min) -40°C
Supply Voltage-Max (Vsup) 3.6V
Temperature GradeINDUSTRIAL
Supply Voltage-Min (Vsup) 2.7V
Operating ModeASYNCHRONOUS
Organization 16MX16
Memory Width 16
Memory Density 268435456 bit
Access Time (Max) 100 ns
Parallel/Serial PARALLEL
Memory IC Type FLASH
Programming Voltage3V
Alternate Memory Width 8
Height Seated (Max) 1.4mm
Length 13mm
Width 11mm
RoHS StatusNon-RoHS Compliant
In-Stock:1421 items

S29GL256N10FAI020 Product Details

S29GL256N10FAI020 Overview


Case Bulk is available. The chip has 64 terminations. This part supports as many as 1 functions for the comprehensive working procedure. The memory device is designed to be supplied with an 3V volt power supply in order to operate properly. Nonvolatile memory arrays require 3V programming voltages to change their states. FLASH is the memory IC type of this chip. Using ic memory chip above 85°C is recommended. As a result, the part must operate at an operating temperature of -40°C, otherwise it will not work.

S29GL256N10FAI020 Features



S29GL256N10FAI020 Applications


There are a lot of Cypress Semiconductor Corp S29GL256N10FAI020 Memory applications.

  • embedded logic
  • Cache memory
  • workstations,
  • graphics card
  • networks
  • personal computers
  • Camcorders
  • eSRAM
  • DVD disk buffer
  • supercomputers

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