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S29GL01GT11TFIV20

S29GL01GT11TFIV20

S29GL01GT11TFIV20

Cypress Semiconductor Corp

GL-T Memory IC GL-T Series 18.4mm mm

SOT-23

S29GL01GT11TFIV20 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 13 Weeks
Mounting Type Surface Mount
Package / Case 56-TFSOP (0.724, 18.40mm Width)
Surface MountYES
Operating Temperature-40°C~85°C TA
PackagingTray
Published 2016
Series GL-T
Part StatusActive
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 56
HTS Code8542.32.00.51
Technology FLASH - NOR
Voltage - Supply 1.65V~3.6V
Terminal Position DUAL
Number of Functions 1
Supply Voltage 3V
Terminal Pitch0.5mm
JESD-30 Code R-PDSO-G56
Supply Voltage-Max (Vsup) 3.6V
Supply Voltage-Min (Vsup) 2.7V
Memory Size1Gb 128M x 8
Memory TypeNon-Volatile
Operating ModeASYNCHRONOUS
Access Time 110ns
Memory Format FLASH
Memory InterfaceParallel
Organization 64MX16
Memory Width 16
Write Cycle Time - Word, Page 60ns
Memory Density 1073741824 bit
Programming Voltage2.7V
Height Seated (Max) 1.2mm
Length 18.4mm
Width 14mm
RoHS StatusROHS3 Compliant
In-Stock:484 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$12.17000$12.17
10$11.26900$112.69
25$11.01400$275.35
91$10.95363$996.78033
182$9.64319$1755.06058
273$9.16608$2502.33984
546$9.07200$4953.312

S29GL01GT11TFIV20 Product Details

S29GL01GT11TFIV20 Overview


There is a Non-Volatile memory type associated with this device. It comes in a Tray. The 56-TFSOP (0.724, 18.40mm Width) case contains it. On the chip, there is an 1Gb 128M x 8 memory, which is the size of the chip's memory. This device uses a FLASH-format memory, which is of mainstream design. With an extended designed operating temperature of -40°C~85°C TA, this device is capable of lots of demanding applications. With 1.65V~3.6V as the supply voltage, it is capable of handling memory ics. Its recommended mounting type is Surface Mount. The chip has 56 terminations. In total, this part supports 1 functions. Memory devices such as this one are designed to be powered by 3V and should be used as such. It is an important component of the GL-T series memory devices used in a variety of applications. To alter the state of certain nonvolatile memory arrays, 2.7V programming voltage is required.

S29GL01GT11TFIV20 Features


Package / Case: 56-TFSOP (0.724, 18.40mm Width)

S29GL01GT11TFIV20 Applications


There are a lot of Cypress Semiconductor Corp S29GL01GT11TFIV20 Memory applications.

  • workstations,
  • Camcorders
  • DVD disk buffer
  • networks
  • networking
  • eSRAM
  • hard disk drive (HDD)
  • Cache memory
  • personal computers
  • eDRAM

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