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S26KS512SDABHV030

S26KS512SDABHV030

S26KS512SDABHV030

Cypress Semiconductor Corp

HyperFlash? KS Memory IC HyperFlash? KS Series 8mm mm

SOT-23

S26KS512SDABHV030 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 13 Weeks
Mounting Type Surface Mount
Package / Case 24-VBGA
Surface MountYES
Operating Temperature-40°C~105°C TA
PackagingTray
Published 2016
Series HyperFlash™ KS
Part StatusActive
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 24
HTS Code8542.32.00.51
Technology FLASH - NOR
Voltage - Supply 1.7V~1.95V
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) NOT SPECIFIED
Number of Functions 1
Supply Voltage 1.8V
Terminal Pitch1mm
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PBGA-B24
Supply Voltage-Max (Vsup) 2V
Supply Voltage-Min (Vsup) 1.7V
Memory Size512Mb 64M x 8
Memory TypeNon-Volatile
Operating ModeSYNCHRONOUS
Clock Frequency 100MHz
Access Time 96ns
Memory Format FLASH
Memory InterfaceParallel
Organization 64MX8
Memory Width 8
Memory Density 536870912 bit
Programming Voltage1.8V
Height Seated (Max) 1mm
Length 8mm
Width 6mm
RoHS StatusROHS3 Compliant
In-Stock:584 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$13.44000$13.44
10$12.44500$124.45
25$12.27160$306.79
50$12.12080$606.04
100$10.62270$1062.27
338$10.16346$3435.24948

S26KS512SDABHV030 Product Details

S26KS512SDABHV030 Overview


A Non-Volatile-type memory can be classified as the memory type of this device. In addition, memory ics is available in a Tray case as well. The file is embedded in a 24-VBGA case. 512Mb 64M x 8 is the chip's memory size. There is a FLASH-format memory used in this device, which is the memory format used by mainstream devices. -40°C~105°C TA is an extended operating temperature range, making this device ideal for demanding applications. A voltage of 1.7V~1.95V can be supplied to memory ics. Its recommended mounting type is Surface Mount. 24 terminations are planted on the chip. The part supports at least 1 functions to ensure a comprehensive working process. The memory device is designed to be supplied with an 1.8V volt power supply in order to operate properly. In order to operate effectively, the memory rotates at a clock frequency within a range of 100MHz. Among the HyperFlash? KS series of memory devices, this part is essential for its applications. Nonvolatile memory arrays require 1.8V programming voltage to change their state.

S26KS512SDABHV030 Features


Package / Case: 24-VBGA

S26KS512SDABHV030 Applications


There are a lot of Cypress Semiconductor Corp S26KS512SDABHV030 Memory applications.

  • telecommunications
  • workstations,
  • nonvolatile BIOS memory
  • networks
  • networking
  • graphics card
  • eDRAM
  • multimedia computers
  • Cache memory
  • personal digital assistants

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