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S26KL512SDABHI020

S26KL512SDABHI020

S26KL512SDABHI020

Cypress Semiconductor Corp

HyperFlash? KL Memory IC HyperFlash? KL Series

SOT-23

S26KL512SDABHI020 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 13 Weeks
Mounting Type Surface Mount
Package / Case 24-VBGA
Surface MountYES
Operating Temperature-40°C~85°C TA
PackagingTray
Published 2016
Series HyperFlash™ KL
Part StatusActive
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 24
ECCN Code 3A991.B.1.A
HTS Code8542.32.00.51
Technology FLASH - NOR
Voltage - Supply 2.7V~3.6V
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) NOT SPECIFIED
Number of Functions 1
Supply Voltage 3V
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PBGA-B24
Supply Voltage-Max (Vsup) 3.6V
Supply Voltage-Min (Vsup) 2.7V
Memory Size512Mb 64M x 8
Memory TypeNon-Volatile
Operating ModeSYNCHRONOUS
Clock Frequency 100MHz
Access Time 96ns
Memory Format FLASH
Memory InterfaceParallel
Organization 64MX8
Memory Width 8
Memory Density 536870912 bit
Screening Level AEC-Q100
Programming Voltage3V
RoHS StatusROHS3 Compliant
In-Stock:689 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$10.46000$10.46
10$9.68500$96.85
25$9.46520$236.63
50$9.41320$470.66
100$8.28710$828.71
338$7.87710$2662.4598
676$7.79626$5270.27176

S26KL512SDABHI020 Product Details

S26KL512SDABHI020 Overview


There is a Non-Volatile memory type associated with this device. It comes in a Tray. Embedded in the 24-VBGA case, memory ics is a single file. The memory size of the chip is 512Mb 64M x 8 Mb. There is a mainstream memory format used by this device, which is called FLASH-format memory. With an extended designed operating temperature of -40°C~85°C TA, this device is capable of lots of demanding applications. The device is capable of handling a supply voltage of 2.7V~3.6V. As far as the mounting type is concerned, Surface Mount is recommended. On the chip, there are 24 terminations. The comprehensive working procedure is supported by 1 functions in this part. A voltage of 3V is required for the operation of this memory device. The memory has a clock frequency rotation within 100MHz. HyperFlash? KL series memory devices play an important role in the applications they target. A programming voltage of 3V is required to alter the state of certain nonvolatile memory arrays.

S26KL512SDABHI020 Features


Package / Case: 24-VBGA

S26KL512SDABHI020 Applications


There are a lot of Cypress Semiconductor Corp S26KL512SDABHI020 Memory applications.

  • main computer memory
  • hard disk drive (HDD)
  • data buffer
  • servers
  • Cache memory
  • embedded logic
  • mainframes
  • networking
  • cell phones
  • networks

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