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S25FL512SAGBHBA10

S25FL512SAGBHBA10

S25FL512SAGBHBA10

Cypress Semiconductor Corp

Automotive, AEC-Q100, FL-S Memory IC Automotive, AEC-Q100, FL-S Series 8mm mm

SOT-23

S25FL512SAGBHBA10 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 13 Weeks
Mounting Type Surface Mount
Package / Case 24-TBGA
Surface MountYES
Operating Temperature-40°C~105°C TA
PackagingTray
Series Automotive, AEC-Q100, FL-S
Part StatusActive
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 24
Additional FeatureITS ALSO CONFIGURABLE AS 512MX1
HTS Code8542.32.00.51
Technology FLASH - NOR
Voltage - Supply 2.7V~3.6V
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) NOT SPECIFIED
Number of Functions 1
Supply Voltage 3V
Terminal Pitch1mm
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PBGA-B24
Supply Voltage-Max (Vsup) 3.6V
Supply Voltage-Min (Vsup) 2.7V
Memory Size512Mb 64M x 8
Memory TypeNon-Volatile
Operating ModeSYNCHRONOUS
Clock Frequency 133MHz
Memory Format FLASH
Memory InterfaceSPI - Quad I/O
Organization 64MX8
Memory Width 8
Memory Density 512753664 bit
Screening Level AEC-Q100; TS 16949
Parallel/Serial SERIAL
Programming Voltage3V
Alternate Memory Width 1
Height Seated (Max) 1.2mm
Length 8mm
Width 6mm
RoHS StatusROHS3 Compliant
In-Stock:1013 items

Pricing & Ordering

QuantityUnit PriceExt. Price
338$7.16101$2420.42138

S25FL512SAGBHBA10 Product Details

S25FL512SAGBHBA10 Overview


There is a Non-Volatile memory type associated with this device. The case comes in Tray size. The case is embedded in 24-TBGA. 512Mb 64M x 8 is the chip's memory size. Memory data is stored in FLASH-format, which is common in mainstream devices. A wide operating temperature range makes this device ideal for a variety of demanding applications. With 2.7V~3.6V as the supply voltage, it is capable of handling memory ics. The recommended mounting type for this device is Surface Mount. The chip has 24 terminations. For a comprehensive working procedure, this part supports as many as 1 functions. In order to operate this memory device, it must be supplied with 3V of power. In order to operate effectively, the memory rotates at a clock frequency within a range of 133MHz. The memory chip also offers ITS ALSO CONFIGURABLE AS 512MX1 to level up system performance despite its merits. This part plays an important role in applications that target the Automotive, AEC-Q100, FL-S series of memory devices. Nonvolatile memory arrays require 3V programming voltage to change their state.

S25FL512SAGBHBA10 Features


Package / Case: 24-TBGA
Additional Feature:ITS ALSO CONFIGURABLE AS 512MX1

S25FL512SAGBHBA10 Applications


There are a lot of Cypress Semiconductor Corp S25FL512SAGBHBA10 Memory applications.

  • printers
  • mainframes
  • personal computers
  • main computer memory
  • networks
  • Camcorders
  • Cache memory
  • supercomputers
  • data buffer
  • nonvolatile BIOS memory

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