S25FL127SABNFB100 Overview
A Non-Volatile-type memory can be classified as the memory type of this device. In addition, memory ics is available in a Tray case as well. The case is embedded in 8-WDFN Exposed Pad. A memory chip with a capacity of 128Mb 16M x 8 is used on this device. This device uses a FLASH-format memory, which is of mainstream design. This device has an extended operating temperature range of -40°C~105°C TA, so it's perfect for a wide range of demanding applications. A voltage of 2.7V~3.6V can be supplied to memory ics. The recommended mounting type for this device is Surface Mount. 8 terminations are planted on the chip. In total, 1 functions are supported by this part. The memory device designed for this application has been designed to be powered by an 3V power supply. In order to operate effectively, the memory rotates at a clock frequency within a range of 108MHz. Its target applications rely heavily on the FL-S series memory devices. The programming voltage required for certain nonvolatile memory arrays is 3V.
S25FL127SABNFB100 Features
Package / Case: 8-WDFN Exposed Pad
S25FL127SABNFB100 Applications
There are a lot of Cypress Semiconductor Corp S25FL127SABNFB100 Memory applications.
- eDRAM
- mainframes
- workstations,
- printers
- cell phones
- Cache memory
- eSRAM
- embedded logic
- servers
- DVD disk buffer
