MMBT5401-G Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 10mA 5V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 5mA, 50mA.A constant collector voltage of -600mA is necessary for high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -5V.There is a transition frequency of 100MHz in the part.Single BJT transistor is possible for the collector current to fall as low as 600mA volts at Single BJT transistors maximum.
MMBT5401-G Features
the DC current gain for this device is 100 @ 10mA 5V
the vce saturation(Max) is 500mV @ 5mA, 50mA
the emitter base voltage is kept at -5V
a transition frequency of 100MHz
MMBT5401-G Applications
There are a lot of Comchip Technology MMBT5401-G applications of single BJT transistors.
- Muting
- Driver
- Inverter
- Interface
