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CDBJFSC3650-G

CDBJFSC3650-G

CDBJFSC3650-G

Comchip Technology

DIODE SILICON CARBIDE POWER SCHO

SOT-23

CDBJFSC3650-G Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 12 Weeks
Mounting Type Through Hole
Package / Case TO-220-2 Full Pack
PackagingTube
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Speed No Recovery Time > 500mA (Io)
Diode Type Silicon Carbide Schottky
Current - Reverse Leakage @ Vr 100μA @ 650V
Voltage - Forward (Vf) (Max) @ If 1.7V @ 3A
Operating Temperature - Junction -55°C~175°C
Voltage - DC Reverse (Vr) (Max) 650V
Current - Average Rectified (Io) 3A DC
Reverse Recovery Time 0ns
Capacitance @ Vr, F 190pF @ 0V 1MHz
RoHS StatusROHS3 Compliant
In-Stock:3607 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$1.930000$1.93
10$1.820755$18.20755
100$1.717693$171.7693
500$1.620465$810.2325
1000$1.528741$1528.741

About CDBJFSC3650-G

The CDBJFSC3650-G from Comchip Technology is a high-performance microcontroller designed for a wide range of embedded applications. This component features DIODE SILICON CARBIDE POWER SCHO.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the CDBJFSC3650-G, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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