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UHN1A332MHD

UHN1A332MHD

UHN1A332MHD

Nichicon

Aluminum Electrolytic Capacitors - Leaded 10volts 3300uF 12.5x25 20% 5LS

SOT-23

UHN1A332MHD Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Through Hole
Mounting Type Through Hole
Package / Case Radial, Can
Terminal Shape WIRE
Number of Pins 2
Dielectric MaterialAluminium
Operating Temperature-25°C~105°C
PackagingBulk
Published 2009
Series UHN
Size / Dimension 0.492Dia 12.50mm
Tolerance ±20%
JESD-609 Code e3
Pbfree Code yes
Part StatusObsolete
Moisture Sensitivity Level (MSL) Not Applicable
Number of Terminations 2
Termination Radial
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Applications General Purpose
Capacitance 3300μF
Voltage - Rated DC 10V
Lead Pitch 5mm
Capacitor Type ALUMINUM ELECTROLYTIC CAPACITOR
Lead Spacing0.197 5.00mm
Lifetime @ Temp 2000 Hrs @ 105°C
Leakage Current 990μA
Ripple Current3.37A
Polarization Polar
Life (Hours) 2000 hours
Impedance8mOhm
Dissipation Factor0.19 %
Diameter 12.5mm
Height 25mm
Height Seated (Max) 1.043 26.50mm
Radiation HardeningNo
RoHS StatusRoHS Compliant
In-Stock:4279 items

About UHN1A332MHD

The UHN1A332MHD from Nichicon is a high-performance microcontroller designed for a wide range of embedded applications. This component features Aluminum Electrolytic Capacitors - Leaded 10volts 3300uF 12.5x25 20% 5LS.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the UHN1A332MHD, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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