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MX30UF4G28AB-TI

MX30UF4G28AB-TI

MX30UF4G28AB-TI

Macronix

Memory IC 18.4mm mm

SOT-23

MX30UF4G28AB-TI Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Package / Case TFSOP
Surface MountYES
Number of Terminations 48
Max Operating Temperature85°C
Min Operating Temperature -40°C
Technology CMOS
Terminal Position DUAL
Terminal FormGULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Number of Functions 1
Supply Voltage 1.8V
Terminal Pitch0.5mm
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-G48
Supply Voltage-Max (Vsup) 1.95V
Temperature GradeINDUSTRIAL
Supply Voltage-Min (Vsup) 1.7V
Interface Parallel
Memory TypeFLASH, NAND
Operating ModeASYNCHRONOUS
Organization 512MX8
Memory Width 8
Memory Density 4294967296 bit
Programming Voltage1.8V
Length 18.4mm
Height Seated (Max) 1.2mm
Width 12mm
RoHS StatusRoHS Compliant
Lead Free Lead Free
In-Stock:1012 items

Pricing & Ordering

QuantityUnit PriceExt. Price
960$6.05493$5812.7328

MX30UF4G28AB-TI Product Details

MX30UF4G28AB-TI Overview


In terms of its memory type, it can be classified as FLASH, NAND. The case is embedded in TFSOP. On the chip, there are 48 terminations. The comprehensive working procedure is supported by 1 functions in this part. A voltage of 1.8V is required for the operation of this memory device. A minimum operating temperature of -40°C is required for this device. It should not be operated above 85°C°C. A programming voltage of 1.8V is required to alter the state of certain nonvolatile memory arrays.

MX30UF4G28AB-TI Features


Package / Case: TFSOP


MX30UF4G28AB-TI Applications


There are a lot of Macronix
MX30UF4G28AB-TI Memory applications.


  • eSRAM
  • mainframes
  • multimedia computers
  • networking
  • personal computers
  • servers
  • supercomputers
  • telecommunications
  • workstations,
  • DVD disk buffer

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