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MX29GL512FUT2I-11G

MX29GL512FUT2I-11G

MX29GL512FUT2I-11G

Macronix

Memory IC 18.4mm mm

SOT-23

MX29GL512FUT2I-11G Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Package / Case TFSOP
Surface MountYES
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 56
Terminal Finish Matte Tin (Sn)
Max Operating Temperature85°C
Min Operating Temperature -40°C
Terminal Position DUAL
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
Number of Functions 1
Supply Voltage 3V
Terminal Pitch0.5mm
Time@Peak Reflow Temperature-Max (s) 40
JESD-30 Code R-PDSO-G56
Supply Voltage-Max (Vsup) 3.6V
Temperature GradeINDUSTRIAL
Supply Voltage-Min (Vsup) 2.7V
Interface Parallel
Memory TypeFLASH, NOR
Operating ModeASYNCHRONOUS
Organization 32MX16
Memory Width 16
Memory Density 536870912 bit
Access Time (Max) 110 ns
Programming Voltage3V
Alternate Memory Width 8
Length 18.4mm
Height Seated (Max) 1.2mm
Width 14mm
RoHS StatusRoHS Compliant
Lead Free Lead Free
In-Stock:2780 items

Pricing & Ordering

QuantityUnit PriceExt. Price
960$6.22793$5978.8128

MX29GL512FUT2I-11G Product Details

MX29GL512FUT2I-11G Overview


FLASH, NOR is the type of memory it has. The TFSOP case contains it. The chip has 56 terminations. For a comprehensive working procedure, this part supports as many as 1 functions. In order to operate this memory device, it must be supplied with 3V of power. This device must operate at a minimum temperature of -40°C. Temperatures no higher than 85°C degrees Celsius are recommended for operation. Nonvolatile memory arrays require 3V programming voltage to change their state.

MX29GL512FUT2I-11G Features


Package / Case: TFSOP


MX29GL512FUT2I-11G Applications


There are a lot of Macronix
MX29GL512FUT2I-11G Memory applications.


  • cell phones
  • eSRAM
  • mainframes
  • multimedia computers
  • networking
  • personal computers
  • servers
  • supercomputers
  • telecommunications
  • workstations,

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