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GBI10M

GBI10M

GBI10M

Diotec Semiconductor AG

BRIDGE RECTIFIER DIODE SILICON 260 SINGLE Box

SOT-23

GBI10M Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Surface MountNO
Diode Element Material SILICON
Number of Terminals 4
ECCN (US) EAR99
Bridge Type Single Phase
Peak Reverse Repetitive Voltage (V) 1000
Peak Average Forward Current (A) 10
Peak RMS Reverse Voltage (V) 700
Peak Non-Repetitive Forward Surge Current (A) 200
Peak Forward Voltage (V) 1.1@5A
Peak Reverse Current (uA) 5
Peak Reverse Recovery Time (ns) 1500(Typ)
Minimum Operating Temperature (°C) -50
Maximum Operating Temperature (°C) 150
Supplier Temperature Grade Commercial
Military No
Mounting Through Hole
Package Height 20
Package Length 30
Package Width 4.6
PCB changed 4
Package Shape RECTANGULAR
Manufacturer Diotec Semiconductor AG
PackagingBox
Part StatusActive
Additional FeatureUL RECOGNIZED
HTS Code8541.10.00.80
Subcategory Bridge Rectifier Diodes
Terminal Position SINGLE
Terminal FormTHROUGH-HOLE
Peak Reflow Temperature (Cel) 260
Reach Compliance Code compliant
Pin Count4
JESD-30 Code R-PSIP-T4
Qualification StatusNot Qualified
Number of Elements 4
Configuration Single
Diode Type BRIDGE RECTIFIER DIODE
Output Current-Max 3 A
Number of Phases 1
Rep Pk Reverse Voltage-Max 1000 V
Non-rep Pk Forward Current-Max 200 A
RoHS StatusYes with exemptions
In-Stock:12880 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$1.158000$1.158
10$1.092453$10.92453
100$1.030616$103.0616
500$0.972279$486.1395
1000$0.917244$917.244

GBI10M Product Details

GBI10M Overview


According to the datasheets, the peak forward voltage is [email protected] the peak RMS reverse voltage range of 700, this device can operate efficiently.Diode can read a maximum output current voltage of 3 A using this device.

GBI10M Features


the forward peak voltage is 1.1@5A
the peak RMS reverse voltage range of 700
a maximum output current voltage of 3 A


GBI10M Applications


There are a lot of Diotec Semiconductor AG
GBI10M applications of RF diodes.


  • Sensor interfaces of security systems
  • Telematic systems
  • Compensators
  • Radar systems for industrial use
  • Ultra high-speed switching
  • Clamping circuits
  • Diode ring mixer
  • RF detector
  • RF voltage doubler
  • Wearables

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