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CEDM8001VL TR

CEDM8001VL TR

CEDM8001VL TR

Central Semiconductor

SOT-23

CEDM8001VL TR Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Surface MountYES
Number of Terminals 3
Transistor Element Material SILICON
ECCN Code EAR99
Additional FeatureLOGIC LEVEL COMPATIBLE
HTS Code8541.21.00.95
Terminal Position BOTTOM
Terminal FormNO LEAD
Reach Compliance Code compliant
JESD-30 Code R-PBCC-N3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Operating ModeENHANCEMENT MODE
Case Connection DRAIN
Transistor Application SWITCHING
Polarity/Channel Type P-CHANNEL
Drain Current-Max (Abs) (ID) 0.1A
Drain-source On Resistance-Max 12Ohm
DS Breakdown Voltage-Min 20V
FET Technology METAL-OXIDE SEMICONDUCTOR
In-Stock:3060 items

CEDM8001VL TR Product Details

CEDM8001VL TR Overview


The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 0.1A.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 20V in order to maintain normal operation.

CEDM8001VL TR Features




CEDM8001VL TR Applications


There are a lot of Central Semiconductor
CEDM8001VL TR applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools

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