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2N4424

2N4424

2N4424

Central Semiconductor

1 Elements 3 Terminations TO-92

SOT-23

2N4424 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 8 Weeks
Mount Through Hole
Package / Case TO-92
Published 2001
JESD-609 Code e0
Pbfree Code no
Part StatusActive
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Max Operating Temperature150°C
Min Operating Temperature -65°C
Additional FeatureLOW NOISE
HTS Code8541.21.00.95
Subcategory Other Transistors
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count3
JESD-30 Code O-PBCY-T3
Qualification StatusNot Qualified
Number of Elements 1
Polarity NPN
Power Dissipation-Max 625mW
Element ConfigurationSingle
Transistor Application AMPLIFIER
Collector Emitter Voltage (VCEO) 300mV
Max Collector Current 500mA
Collector Emitter Breakdown Voltage40V
Transition Frequency 100MHz
Collector Emitter Saturation Voltage300mV
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 5V
hFE Min 180
DC Current Gain-Min (hFE) 180
RoHS StatusRoHS Compliant
Lead Free Lead Free
In-Stock:3226 items

2N4424 Product Details

2N4424 Overview


This system offers maximum design flexibility due to a collector emitter saturation voltage of 300mV.With the emitter base voltage set at 5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.

2N4424 Features


a collector emitter saturation voltage of 300mV
the emitter base voltage is kept at 5V
a transition frequency of 100MHz


2N4424 Applications


There are a lot of Central Semiconductor
2N4424 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting

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