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2N3583

2N3583

2N3583

Central Semiconductor

1 Elements 2 Terminations TO-66

SOT-23

2N3583 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 8 Weeks
Mount Through Hole
Package / Case TO-66
Published 2016
JESD-609 Code e0
Pbfree Code no
Part StatusActive
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Max Operating Temperature150°C
Min Operating Temperature -65°C
HTS Code8541.29.00.95
Subcategory Other Transistors
Terminal Position BOTTOM
Terminal FormPIN/PEG
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count2
JESD-30 Code O-MBFM-P2
Qualification StatusNot Qualified
Number of Elements 1
Polarity NPN
Configuration SINGLE
Power Dissipation-Max 35W
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product10MHz
Collector Emitter Voltage (VCEO) 5V
Max Collector Current 1A
Collector Emitter Breakdown Voltage175V
Transition Frequency 10MHz
Collector Emitter Saturation Voltage5V
Frequency - Transition 10MHz
Collector Base Voltage (VCBO) 250V
Emitter Base Voltage (VEBO) 6V
hFE Min 40
DC Current Gain-Min (hFE) 10
RoHS StatusRoHS Compliant
In-Stock:2591 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$14.43000$14.43
10$13.12100$131.21
30$12.13667$364.1001
120$11.15267$1338.3204
270$10.16863$2745.5301
510$9.51259$4851.4209

2N3583 Product Details

2N3583 Overview


The collector emitter saturation voltage is 5V, giving you a wide variety of design options.An emitter's base voltage can be kept at 6V to gain high efficiency.As a result, the part has a transition frequency of 10MHz.In extreme cases, the collector current can be as low as 1A volts.

2N3583 Features


a collector emitter saturation voltage of 5V
the emitter base voltage is kept at 6V
a transition frequency of 10MHz


2N3583 Applications


There are a lot of Central Semiconductor
2N3583 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting

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