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2N2405

2N2405

2N2405

Central Semiconductor

1 Elements 3 Terminations SILICON TO-39

SOT-23

2N2405 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 8 Weeks
Mount Through Hole
Package / Case TO-39
Transistor Element Material SILICON
Published 2006
JESD-609 Code e0
Pbfree Code no
Part StatusActive
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Subcategory Other Transistors
Terminal Position BOTTOM
Terminal FormWIRE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count3
JESD-30 Code O-MBCY-W3
Qualification StatusNot Qualified
Operating Temperature (Max) 200°C
Number of Elements 1
Polarity NPN
Power Dissipation-Max 1W
Element ConfigurationSingle
Transistor Application SWITCHING
Gain Bandwidth Product50MHz
Collector Emitter Voltage (VCEO) 500mV
Max Collector Current 1A
Collector Emitter Breakdown Voltage90V
Transition Frequency 50MHz
Collector Emitter Saturation Voltage500mV
Frequency - Transition 120MHz
Collector Base Voltage (VCBO) 120V
Emitter Base Voltage (VEBO) 7V
hFE Min 60
DC Current Gain-Min (hFE) 60
RoHS StatusRoHS Compliant
In-Stock:6959 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$3.451898$3.451898
10$3.256507$32.56507
100$3.072177$307.2177
500$2.898280$1449.14
1000$2.734227$2734.227

2N2405 Product Details

2N2405 Overview


A collector emitter saturation voltage of 500mV allows maximum design flexibility.The base voltage of the emitter can be kept at 7V to achieve high efficiency.In this part, there is a transition frequency of 50MHz.The maximum collector current is 1A volts.

2N2405 Features


a collector emitter saturation voltage of 500mV
the emitter base voltage is kept at 7V
a transition frequency of 50MHz


2N2405 Applications


There are a lot of Central Semiconductor
2N2405 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting

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