2N2368 Overview
This system offers maximum design flexibility due to a collector emitter saturation voltage of 250mV.With the emitter base voltage set at 4V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 400MHz.
2N2368 Features
a collector emitter saturation voltage of 250mV
the emitter base voltage is kept at 4V
a transition frequency of 400MHz
2N2368 Applications
There are a lot of Central Semiconductor
2N2368 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting