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NE68819-A

NE68819-A

NE68819-A

CEL

RF Bipolar Transistors NPN High Frequency

SOT-23

NE68819-A Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-523
Supplier Device Package 3-SuperMiniMold (19)
Operating Temperature150°C TJ
PackagingBulk
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation125mW
Base Part Number NE68819
Polarity NPN
Element ConfigurationSingle
Power - Max 125mW
Transistor Type NPN
Collector Emitter Voltage (VCEO) 6V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 3mA 1V
Collector Emitter Breakdown Voltage6V
Voltage - Collector Emitter Breakdown (Max) 6V
Current - Collector (Ic) (Max) 100mA
Frequency - Transition 5GHz
Emitter Base Voltage (VEBO) 2V
hFE Min 70
Continuous Collector Current 100mA
Noise Figure (dB Typ @ f) 1.7dB ~ 2.5dB @ 2GHz
RoHS StatusRoHS Compliant
In-Stock:3713 items

About NE68819-A

The NE68819-A from CEL is a high-performance microcontroller designed for a wide range of embedded applications. This component features RF Bipolar Transistors NPN High Frequency.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the NE68819-A, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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