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BD241A-S

BD241A-S

BD241A-S

Bourns Inc.

BD241A-S datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Bourns Inc. stock available on our website

SOT-23

BD241A-S Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Operating Temperature-65°C~150°C TJ
PackagingTube
Published 1993
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Other Transistors
Max Power Dissipation40W
Base Part Number BD241
Number of Elements 1
Element ConfigurationSingle
Power Dissipation40W
Power - Max 2W
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 3A
DC Current Gain (hFE) (Min) @ Ic, Vce 25 @ 1A 4V
Current - Collector Cutoff (Max) 300μA
Vce Saturation (Max) @ Ib, Ic 1.2V @ 600mA, 3A
Collector Emitter Breakdown Voltage60V
Emitter Base Voltage (VEBO) 5V
Continuous Collector Current 3A
Radiation HardeningNo
RoHS StatusROHS3 Compliant
In-Stock:3084 items

BD241A-S Product Details

BD241A-S Overview


This device has a DC current gain of 25 @ 1A 4V, which is the ratio between the collector current and the base current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.2V @ 600mA, 3A.Single BJT transistor is essential to maintain the continuous collector voltage at 3A to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.A maximum collector current of 3A volts is possible.

BD241A-S Features


the DC current gain for this device is 25 @ 1A 4V
the vce saturation(Max) is 1.2V @ 600mA, 3A
the emitter base voltage is kept at 5V

BD241A-S Applications


There are a lot of Bourns Inc. BD241A-S applications of single BJT transistors.

  • Driver
  • Muting
  • Interface
  • Inverter

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