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IRFPS35N50L

IRFPS35N50L

IRFPS35N50L

VISHAY SILICONIX

IRFPS35N50L datasheet pdf and Unclassified product details from VISHAY SILICONIX stock available on our website

SOT-23

IRFPS35N50L Datasheet

non-compliant

In-Stock: 3846 items
Specifications
Name Value
Type Parameter
Surface Mount NO
Number of Terminals 3
Transistor Element Material SILICON
JESD-609 Code e0
Terminal Finish TIN LEAD
Terminal Position SINGLE
Terminal Form THROUGH-HOLE
Pin Count 3
JESD-30 Code R-PSIP-T3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Transistor Application SWITCHING
Polarity/Channel Type N-CHANNEL
Drain Current-Max (Abs) (ID) 34A
Drain-source On Resistance-Max 0.145Ohm
Pulsed Drain Current-Max (IDM) 140A
DS Breakdown Voltage-Min 500V
Avalanche Energy Rating (Eas) 560 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR

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