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FCB11N60

FCB11N60

FCB11N60

ON SEMICONDUCTOR

FCB11N60 datasheet pdf and Unclassified product details from ON SEMICONDUCTOR stock available on our website

SOT-23

FCB11N60 Datasheet

non-compliant

In-Stock: 1571 items
Specifications
Name Value
Type Parameter
Surface Mount YES
Number of Terminals 2
Transistor Element Material SILICON
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
HTS Code 8541.29.00.95
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 245
Reach Compliance Code compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Operating Temperature (Max) 150°C
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Transistor Application SWITCHING
Polarity/Channel Type N-CHANNEL
JEDEC-95 Code TO-263
Drain Current-Max (Abs) (ID) 11A
Drain-source On Resistance-Max 0.38Ohm
Pulsed Drain Current-Max (IDM) 33A
DS Breakdown Voltage-Min 600V
Avalanche Energy Rating (Eas) 340 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
RoHS Status RoHS Compliant

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SIT8008BI-13-18N-33.000000
SIT9121AI-2C1-XXE166.666600
SIT8008BI-32-25S-14.000000
LB1868

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