BUK9Y8R7-60E

new-10%

Manufacturer part number:BUK9Y8R7-60E

Manufacturer:NXP SEMICONDUCTORS

Description:BUK9Y8R7-60E datasheet pdf and Unclassified product details from NXP SEMICONDUCTORS stock available on our website

Case Package:SOT-23

Datasheet:BUK9Y8R7-60E Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Surface Mount	YES
Number of Terminals	4
Transistor Element Material	SILICON
JESD-609 Code	e3
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Terminal Finish	TIN
Additional Feature	AVALANCHE RATED
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Time@Peak Reflow Temperature-Max (s)	30
Reference Standard	AEC-Q101; IEC-60134
JESD-30 Code	R-PSSO-G4
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Transistor Application	SWITCHING
Polarity/Channel Type	N-CHANNEL
JEDEC-95 Code	MO-235
Drain Current-Max (Abs) (ID)	86A
Drain-source On Resistance-Max	0.0087Ohm
Pulsed Drain Current-Max (IDM)	346A
DS Breakdown Voltage-Min	60V
Avalanche Energy Rating (Eas)	76.5 mJ
FET Technology	METAL-OXIDE SEMICONDUCTOR
RoHS Status	RoHS Compliant