Hotenda Part Number
H1834965
Manufacturer Part
SI4825DY-T1-GE3
Manufacturer
Vishay/Siliconix
Description
MOSFET P-CH 30V 8.1A 8-SOIC
Category
Discrete Semiconductor Products
Family
FETs - Single
Series
-
Manufacturer Quantity
5989
Datasheets Online
-
Price & Packaging & Delivery

Attention: Prices significantly fluctuate during the COVID-19 pandemic . Please send us RFQs for the updated price.

Packaging: Regular packing reel, tube, tray, box and etc.

Delivery: Shipping can be arranged ASAP since payment received

Inquiry
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  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
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FET Type
MOSFET P-Channel, Metal Oxide
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25°C
8.1A (Ta)
Rds On (Max) @ Id, Vgs
14 mOhm @ 11.5A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Gate Charge (Qg) @ Vgs
71nC @ 10V
Input Capacitance (Ciss) @ Vds
-
Power - Max
1.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package
8-SO

Package

SI4825DY-T1-GE3
MOSFET P-CH 30V 8.1A 8-SOIC
SI4825DY-T1-GE3
MOSFET P-CH 30V 8.1A 8-SOIC
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