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25LC128
Hotenda Part Number
H1807643
Manufacturer Part
SCT2120AFC
Manufacturer
ROHM Semiconductor
Description
MOSFET N-CH 650V 29A TO-220AB
Category
Discrete Semiconductor Products
Family
Single FETs
Series
-
Manufacturer Quantity
8667
Datasheets Online
-
Price & Packaging & Delivery
Quantity
Unit Price
Ext. Price
1
$9.07
$9.07
100
$0.08
$8.34

Attention: The price is for reference only , pls send us RFQs for the update price.

Packaging: Regular packing reel, tube, tray, box and etc.

Delivery: Shipping can be arranged ASAP since payment received

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  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
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Datasheets
SCT2120AF Datasheet
Mfg Application Notes
SiC Power Devices and Modules
Online Catalog
Silicon Carbide (SiC) Standard FETs
Video File
ROHM Semiconductor SiC MOSFET Technology
Category
Discrete Semiconductor Products
Current - Continuous Drain (Id) @ 25°C
29A (Tc)
Drain to Source Voltage (Vdss)
650V
FET Feature
Silicon Carbide (SiC)
FET Type
MOSFET N-Channel, Metal Oxide
Family
Transistors - FETs, MOSFETs - Single
Gate Charge (Qg) @ Vgs
61nC @ 18V
Input Capacitance (Ciss) @ Vds
1200pF @ 500V
Manufacturer
Rohm Semiconductor
Mounting Type
Through Hole
Operating Temperature
175°C (TJ)
Package / Case
TO-220-3
Packaging
Tube
Part Status
Not For New Designs
Power - Max
165W
Rds On (Max) @ Id, Vgs
156 mOhm @ 10A, 18V
Series
-
Supplier Device Package
TO-220AB
Vgs(th) (Max) @ Id
4V @ 3.3mA
Standard Package
1,000
Tags
SCT21 (2) SCT2 (9) SCT (78)

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