25LC128
Hotenda Part Number
H1807344
Manufacturer Part
EPC2012
Manufacturer
EPC
Description
TRANS GAN 200V 3A BUMPED DIE
Category
Discrete Semiconductor Products
Family
Single FETs
Series
-
Manufacturer Quantity
8368
Datasheets Online
-
Price & Packaging & Delivery

Attention: The price is for reference only , pls send us RFQs for the update price.

Packaging: Regular packing reel, tube, tray, box and etc.

Delivery: Shipping can be arranged ASAP since payment received

Inquiry
  • FedEx, DHL, and UPS can be selected.
  • You can select whether to charge shipping fee by your shipping account or to charge by our side.
  • Please confirm with the logistics company in advance if you are in a remote area. (It may cost extra fees (35-50 USD) for delivery at those areas.)
  • The shopping cart will automatically calculate the shipping cost.
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped. (Package Tracking) (It may take up to 24 hours before carriers display the info.)
  • PayPal, Credit Card, TT in advance (bank transfer), Western Union can be chosen.
  • Cash transfer only. (Transfer with checks and bills are not accepted.)
  • Customer is responsible for paying all possible charges, including sales tax, VAT and customs charges,etc.
  • If you need the detailed invoice or tax ID, please email us.
Current - Continuous Drain (Id) @ 25°C
3A (Ta)
Drain to Source Voltage (Vdss)
200V
FET Feature
Logic Level Gate
FET Type
GaNFET N-Channel, Gallium Nitride
Gate Charge (Qg) @ Vgs
1.5nC @ 100V
Input Capacitance (Ciss) @ Vds
128pF @ 100V
Mounting Type
Surface Mount
Package / Case
Die
Power - Max
-
Rds On (Max) @ Id, Vgs
100 mOhm @ 3A, 5V
Supplier Device Package
Die
Vgs(th) (Max) @ Id
2.5V @ 1mA

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