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25LC128
Hotenda Part Number
H1807612
Manufacturer Part
C2M0280120D
Manufacturer
Cree, Inc.
Description
MOSFET N-CH 1200V 10A TO-247-3
Category
Discrete Semiconductor Products
Family
Single FETs
Series
-
Manufacturer Quantity
8636
Datasheets Online
-
Price & Packaging & Delivery
Quantity
Unit Price
Ext. Price
1
$5.43
$5.43
100
$0.05
$5.22
500
$0.01
$5.09

Attention: The price is for reference only , pls send us RFQs for the update price.

Packaging: Regular packing reel, tube, tray, box and etc.

Delivery: Shipping can be arranged ASAP since payment received

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  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
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Datasheets
C2M0280120D
Featured Product
Cree - Silicon Carbide Power MOSFETs
Online Catalog
Silicon Carbide (SiC) Standard FETs
Category
Discrete Semiconductor Products
Current - Continuous Drain (Id) @ 25°C
10A (Tc)
Drain to Source Voltage (Vdss)
1200V (1.2kV)
FET Feature
Silicon Carbide (SiC)
FET Type
MOSFET N-Channel, Metal Oxide
Family
Transistors - FETs, MOSFETs - Single
Gate Charge (Qg) @ Vgs
20.4nC @ 20V
Input Capacitance (Ciss) @ Vds
259pF @ 1000V
Manufacturer
Cree/Wolfspeed
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
TO-247-3
Packaging
Tube
Part Status
Active
Power - Max
62.5W
Rds On (Max) @ Id, Vgs
370 mOhm @ 6A, 20V
Series
Z-FET™
Supplier Device Package
TO-247-3
Vgs(th) (Max) @ Id
2.8V @ 1.25mA (Typ)
Standard Package
30
Tags
C2M0 (5) C2M (8)

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