SiC power semiconductors were born in 4.6 billion years of meteorites, and they are extremely rare. As a semiconductor, they have excellent performance. It is reported that between 2016 and 2022, it is expected to achieve a compound annual growth rate of 6%. Moreover, the emergence of new applications will also promote the development of the silicon carbide power electronic device market. In other words, in 2022, the total market value of silicon carbide devices will exceed $1 billion. In fact, after 2020, the pace of market development will further accelerate, and between 2020 and 2022, it is expected to achieve a compound annual growth rate of 40%.
Although SiC can be made by hand, the processing is extremely difficult, so how to mass produce sic power components has always been a problem in the industry. ROHM has nearly 30 years of experience in this area, and in March 2012 it began mass production of "all SiC" power modules.
At the MWC in 2019, ROHM showed reporters the power solutions based on the world's most advanced SiC (silicon carbide) components for industrial equipment and automotive, as well as the latest silicon carbide technology from ROHM.
ROHM booth event site
ROHM's SiC products are divided into three categories, diodes, mos tubes and power modules. In addition to the specific products, ROHM also has a very unique production system. It follows the IDM (Integrated Component Manufacturer) production system and starts from SiC wafers to packaging. It can provide customers with long-term stability and high quality. goods.
SiC product lineup
In the automotive field, ROHM provides a gate driver with built-in insulation for in-vehicle equipment, a SkW insulated bidirectional DC/DC converter with SiC Trench, and an on-board module driver and SiC MOSFET in a ROHM SiC 6-in-1 package.
As the official technical partner of the Venturi Electric Formula Team participating in the "FIA Electric Formula Championship", it provides technical support for its racing core drive component inverters, providing its world-leading SiC power devices. Diodes (SiC-SBD) were offered in Season 3, and from the fourth season, "Full SiC" power modules with integrated transistors and diodes were available. Compared with the inverter of the second season without SiC, the inverter of the fourth season has a total weight reduction of 6kg and a volume reduction of 43%. ROHM also provided technical support for the miniaturization, light weight and high efficiency of the car. In the fourth season (2017/2018), the power module provided by ROHM uses ROHM's unique internal structure of the module and a new package optimized for thermal design, which successfully increases the rated current and reduces the switching loss. Helps energy saving and miniaturization of the cooling system.
At the same time, in terms of industrial equipment, ROHM also brings a variety of powerful products. For example, 1700V high-voltage SiC MOSFET, which is mainly used for auxiliary power supply, is a widely used SiC MOSFET driver quasi-resonant AC/DC converter control IC for high-power (high-voltage × high-current) inverters and servos. And trench SiC MOSFETs, which can reduce the on-resistance of the same chip size by 50% compared with the previous generation, which will greatly reduce all related equipment such as power conditioners for solar power generation, industrial equipment power supplies, industrial inverters, etc. Power loss. At the same time, the FA inverter/AC servo block diagram for motion control and so on are also displayed.
The staff highlighted Roma's latest SiC product -1700\250A high-voltage "full SiC" power module, which is supported by Tamura's driver board with high reliability and low switching loss. Compared with the same type of products, Has the advantage of low on-resistance. Used for high voltage pulse power supply, DC power grid, etc.
1700\250A high withstand voltage "full SiC" power module
Although SiC has not been widely used due to price issues, it is expected that the adoption of SiC in the EV market will increase the market size of SiC power semiconductors. ROHM will accelerate investment and increase the production capacity of SiC power devices and SiC wafers. It expects a significant increase in demand for silicon carbide in the automotive and industrial sectors.