EPC's EPC9065 is a high efficiency, Zero Voltage Switching (ZVS) differential mode Class-D amplifier development board that operates at, but is not limited to, 6.78 MHz (lowest ISM band).
EPC's GaN-based differential mode development boards that can operate up to 30 MHz.
EPC's GaN FET book WiPo 2nd Edition is a supplement to GaN transistors for efficient power conversion.
The EPC9115 Demonstration Board is a fully regulated, 300 kHz isolated, DC/DC bus converter with a 12 V, 42 A output and an input range of 48 to 60 V.
EPC announce the extension of GaN power transistor portfolio with two eGaN FETs that raise the bar for power conversion performance.
EPC announces the extension of the eGaN power transistor portfolio with high-performance, wider-pitch, chip-scale packages for ease of high volume manufacturing and enhanced compatibility with mature manufacturing processes and assembly lines.
EPC's development board contains two enhancement mode (eGaN®) field effect transistors (FETs) arranged in a half bridge configuration with an onboard Texas Instruments LM5113 gate drive
The first in a new family of "Relaxed Pitch" devices, the EPC2029 80 V, 31 A eGaN FET from EPC features a 1 mm ball pitch.
EPC's GaN today is facing a period of extremely rapid growth because semiconductors using this material give companies a major performance and cost advantage.
The power block of the Efficient Power Conversion EPC9106 including eGaN FETs, driver, inductor and input/output caps is an ultra-compact 2.1 x 1.6 mm layout.
EPC's EPC2025 saves space, improves efficiency, and lowers system costs
EPC's monolithic half-bridge devices save space, improve efficiency, and lower system costs
EPC's eGaN FETs offer low-output capacitance, low-input capacitance, low-parasitic inductances, and small-size ideal for increasing efficiency.