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Toshiba and SanDisk Corp. have begun volume production of NAND flash memory at a new 300 mm wafer fab in Japan, built under a joint agreement.
Toshiba began construction of the fab last summer and the facility is equipped with manufacturing equipment funded by Toshiba and SanDisk.
The new fab uses 24 nm process technology but will eventually transition to 19 nm technology, the smallest, most advanced process node currently available.
The new fab, which is called Fab 5, is also equipped with advanced earthquake-absorbing structures and integrates multiple power compensation techniques for protection against unexpected power outages.
LED lighting and power-saving manufacturing equipment will support the fab in securing Toshiba's goal of 12 percent less CO2 emissions than Fab 4.
A wafer transportation system links the facility with Fabs 3 and 4 to support efficient manufacturing.
The new fab is part of a joint venture between Toshiba and SanDisk called Flash Forward. Toshiba owns 50.1 percent of the venture and SanDisk, 49.9 percent.
The new fab is part Toshiba's Yokkaichi Operations in Mie Prefecture, Japan.