High step-down-radio buck converters are becoming more popular because they offer increased efficiency and higher levels or reliability.
Higher power, higher efficiency, and other benefits of using GaN-based eighth-brick converters.
Examining a wide-input, 20 A non-isolated buck DC/DC converter design using EPC and Linear Technology components.
Off-the-shelf gate drivers from TI help meet drive requirements of eGaN FETs, enabling designers to tap full benefits from high-performance WBG transistors.
EPC introduces EPC9022 through EPC9030 which offer half-bridge topology with on-board gate driver designed to simplify the evaluation of the EPC8000 family.
A look at the implications of different packaging techniques for different applications and how these can be used to build high performance GaN equipment.
Solutions for the design challenges of high-step-down-ratio DC/DC buck converters including Silicon & eGan FETs.
The 2012 Applied Power Electronics Conference (APEC) held in Disney's Coronado Springs Resort in Orlando, Florida, was an outstanding event in terms of technical papers, presentations, and professional seminars.
Power supply users increasingly demand more effective, smaller and lower-cost solutions.
A Boston-based research firm Strategy Analytics forecast the market for Gallium Nitride (GaN) microelectronic devices would grow to approximately $375M by 2014.